| Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly（3-Hexylthiophene） Thin Films |
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| 引用本文： | 马良. Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly（3-Hexylthiophene） Thin Films[J]. 中国物理快报, 2010, 27(11): 162-165 |
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| 作者姓名： | 马良 |
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| 作者单位： | Department of Chemistry and Chemical Engineering, Minjiang University, Fuzhou 350108 |
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| 基金项目： | Supported by the Technological Project of Fujian Province under Grant No JA10225. |
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| 摘 要： | Effects of dopant properties on microstructures and the electrical characteristics of poly （3-hexylthiophene） （P3HT） films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4？TCNQ）, 6,6-phenyl-C61butyric acid methyl ester （PCBM） and N,N＇？Diphenyl-N,N＇-（m-tolyl）-benzidine （TPD） into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.
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| 关 键 词： | 薄膜晶体管 掺杂效应 微观结构 性能 电学特性 噻吩 己基 场效应迁移率 |
| 收稿时间： | 2010-05-06 |
Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly(3-Hexylthiophene) Thin Films |
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| MA Liang. Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly(3-Hexylthiophene) Thin Films[J]. Chinese Physics Letters, 2010, 27(11): 162-165 |
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| Authors: | MA Liang |
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| Affiliation: | MA Liang(Department of Chemistry and Chemical Engineering, Minjiang University, Fuzhou 350108) |
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