Determination of phosphorus in semiconductor grade silicon by neutron activation analysis |
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Authors: | H Jaskólska L Rowińska |
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Institution: | 1. Institute of Nuclear Research, Centre of Zerań Department XX, (Poland)
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Abstract: | A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3·10?11 g P. Types of errors in the determination of concentration profiles are discussed. |
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