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Determination of phosphorus in semiconductor grade silicon by neutron activation analysis
Authors:H Jaskólska  L Rowińska
Institution:1. Institute of Nuclear Research, Centre of Zerań Department XX, (Poland)
Abstract:A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3·10?11 g P. Types of errors in the determination of concentration profiles are discussed.
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