Solvothermal synthesis of nitrides |
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| Authors: | C Collado W Lai-Tiong A Largeteau B Berdeu G Demazeau |
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| Institution: | 1. Interface Hautes Pressions, E.N.S.C.P.B./I.C.M.C.B. , Avenue Pey Berland, BP 108, 33402, Talence Cedex, France;2. Institut de Chimie de la Matiêre Condensée de Bordeaux , 87 avenue Albert schweitzer, 33608, Pessac Cedex, France;3. Institut de Chimie de la Matiêre Condensée de Bordeaux , 87 avenue Albert schweitzer, 33608, Pessac Cedex, France;4. Interface Hautes Pressions, E.N.S.C.P.B./I.C.M.C.B. , Avenue Pey Berland, BP 108, 33402, Talence Cedex, France |
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| Abstract: | Abstract III-V nitrides are large band-gap semiconductors. They are very promising materials for opto-electronic and microelectronic applications. The present paper deals with a new process for preparing nitrides. Two nitrides, gallium nitride (GaN) and aluminium nitride (AlN), have been synthesiaed through a solvothermal route. This process uses ammonia in supercritical conditions as solvent and metals as source of gallium and aluminium. Moreover, an additive is used to improve the nitridation of the metals. The resulting microcrystallites of nitrides have been charactensed by X-ray diffraction and the morphology has been observed by scanning Electron Microscopy. |
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| Keywords: | Nitrides Solvothed Synthesis Ammonia Metals Additive |
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