Investigation of formation mechanism of Ti3SiC2 by high pressure and high-temperature synthesis |
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| Authors: | Xuhai Li Liang Xu Qingyun Chen Xiuxia Cao Lixin Liu Yuan Wang |
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| Institution: | 1. National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, People’s Republic of China;2. School of National Defence Science and Technology, Southwest University of Science and Technology, Mianyang, People’s Republic of China |
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| Abstract: | ABSTRACTIn this paper, synthesis of titanium silicon carbide (Ti3SiC2) under high pressure and high-temperature condition has been investigated by using the reactant systems Ti/Si/C, Ti/SiC/TiC, Ti/SiC/C and Ti/TiC/Si. Results reveal that Ti/TiC/Si is unsuited to the synthesis of Ti3SiC2 under a high pressure of 2.0?GPa, while an elemental mixture of Ti/Si/C is applicable. By the addition of Al, Ti3SiC2 with 95.8?wt% purity was obtained from elemental mixture with a large excess of silicon. The optimum experimental parameters were determined as Ti/Si/Al/C having the molar ratio of 3:1.5:0.5:1.9, holding at 2.0?GPa and 1300?°C for 60?min. |
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| Keywords: | High pressure Ti3SiC2 formation mechanism |
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