Photoluminescence of InGaAs/GaAs strained-layer quantum well structures under high pressure |
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| Authors: | A. D. Prins J. D. Lambkin K. P. Homewood M. Emeny C. R. Whitehouse |
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| Affiliation: | 1. Strained Layer Superlattice Research Group , University of Surrey , Guildford, Surrey , GU2 5XH , UK;2. Royal Signals and Radar Establishment, St. Andrews Rd. , Gt. Malvern, Worcs, UK |
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| Abstract: | Abstract Measurements of the photoluminescence (PL) of strained In0.2Ga0.8As/GaAs and In0.15Ga0.85As/GaAs quantum well structures together with the PL from bulk GaAs, in a diamond anvil cell show that the pressure coefficient of the ground confined state in the wells depends upon well width (LZ). In the thinnest wells, the coefficient is closer to that of the bulk GaAs (10.7 meV/kbar), as expected. However, in the widest wells the coefficients tend to values (9.5meV/kbar for the 15% alloy and 9.1meV/kbar for the 20% alloy) that are significantly lower than the pressure coefficient of unstrained In0.53Ga0.47As (10.9meV/kbar). It is found that the low pressure coefficients can not be explained by the change in uniaxial stress with pressure due to a difference in bulk moduli between the barrier and well. |
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| Keywords: | Strain Quantum Wells InGaAs/GaAs High Pressure PL |
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