Structure of self-implanted silicon annealed under enhanced hydrostatic pressure |
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Authors: | Andrzej Misiuk Jadwiga Bak-Misiuk Adam Barcz P Romanowski Barbara Surma Artur Wnuk |
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Institution: | 1. Institute of Electron Technology , 02-668, Warsaw, Poland misiuk@ite.waw.pl;3. Institute of Physics, PAS , 02-668, Warsaw, Poland;4. Institute of Electron Technology , 02-668, Warsaw, Poland;5. Institute of Physics, PAS , 02-668, Warsaw, Poland;6. Institute of Electronic Materials Technology , 01-919, Warsaw, Poland |
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Abstract: | Implantation of any ions at a sufficiently high dose and energy (E) into single-crystalline Si leads to the creation of amorphous Si (aSi), with damages peaking near the projected range (R p) of implanted species. Enhanced hydrostatic pressure (HP) at a high temperature (HT) influences the recrystallization of aSi. The structure of self-implanted Czochralski silicon (Si+ dose, D=2×1016 cm?2, E=150 keV, R p=0.22 μm) processed for 5 h at 1400 or 1520 K under HPs up to 1.45 GPa was investigated by X-ray, secondary ion mass spectrometry and photoluminescence methods. The implantation of Si produces vacancies (V) and self-interstitials (Sii). Vacancies and Siis form complex defects at HT–HP, also with contaminants (e.g. oxygen, always present in Czochralski silicon). The mobility and recombination of V and Sii as well as the kinetics of recrystallization are affected by HP, thus processing at HT–HP affects the recovery of aSi. |
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Keywords: | silicon self-implantation aSi annealing hydrostatic pressure structure |
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