Effect of pressure on the electrical resistivity and magnetism in updsn |
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Authors: | F. Honda A. M. Alsmadi V. SechovskÝ J. KamarÁD H. Nakotte A. H. Lacerda |
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Affiliation: | 1. Department of Electronic Structures , Charles University, KFES MFF UK , Ke Karlovu 5, Prague 2 , 12116 , The Czech Republic;2. New Mexico State University , Las Cruces , NM , 88003 , USA;3. Institute of Physics , Academy of Sciences CR , Prague 8 , 181 21 , The Czech Republic;4. National High Magnetic Field Laboratory , LANL , MS E 536, Los Alamos , NM , 87545 , USA |
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Abstract: | The electrical resistivity of a UPdSn single crystal exerted to various hydrostatic pressures was measured as a function of temperature and magnetic field. Clear anomalies in the temperature dependence of resistivity along the c-axis mark the magnetic phase transitions between paramagnetic and antiferromagnetic (AF) state at T N and the AF1?AF2 transition at T 1. Large negative magnetoresistance effects have been observed not only in the AF state as a result of the metamagnetic transition to canted structure at B c , but also at temperatures far above T N . The latter result is attributed to the existence of AF correlations or short range AF orderings in the paramagnetic range. The value of T N increases with increasing applied pressure, whereas T 1 simultaneously decreases. It is also found that B c decreases with increasing pressure. As a consequence, the stability range of the AF-1 phase expands with applied pressure partially on account of the ground-state AF-2 phase. |
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Keywords: | Updsn Electrical Resistivity Magnetoresistance Single Crystal High Pressure |
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