Pressure-induced melting of charge-order in the self-doped mott insulator yttrium nickelate |
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Authors: | J. L. GarcÍA-MUÑOZ M. Amboage M. Hanfland J. A. Alonso M. J. MartÍNEZ-LOPE R. Mortimer |
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Affiliation: | 1. Institut de Ciencia de Materials de Barcelona-CSIC , Campus de Bellaterra, Bellaterra, Barcelona , E-08193 , Spain;2. European Synchrotron Radiation Facility ESRF , BP 220, Grenoble , F-38043 , France;3. Instituto de Ciencia de Materiales de Madrid , CSIC , Cantoblanco, Madrid , E-28049 , Spain;4. Defence Science Technology Laboratory DSTL , Fort Halstead, Sevenoaks, Kent , TN14 7BP , UK |
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Abstract: | The stability under pressure of the charge-density-wave in the insulating phase of YNiO3 was studied by infrared spectroscopy and synchrotron diffraction techniques up to 23 GPa. YNiO3 undergoes a pressure induced insulator-to-metal transition at approximately 15 GPa in the pressure domain, coinciding with the melting of the charge ordered phase. The optical band gap is non-zero above 15 GPa, as is the case above the reported insulator-metal transition (585 K) in the temperature-domain. There is a similarity between the infrared spectral profile around 15 GPa and the infrared spectral profile above ca. 700 K. We conclude therefore that the pressure-induced structural/electronic transition induced around 15 GPa, probably having an as-yet unreported counterpart in the temperature domain at a temperature in excess of 585 K. |
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Keywords: | Yttrium Nickelate Charge-density-wave Semiconducting |
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