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DX-Like behavior of Se-impurity centers in gasb under hydrostatic pressure |
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| Authors: | K. Zitouni A. Kadri L. Konczewicz R. L. Aulombard B. Goutiers J. C. Portal |
| Affiliation: | 1. Micro Opto Electronics Laboratory, Department of Physics , University of ORAN-ES-SENIA , 31100, ORAN , ALGERIA;2. High Pressure Research Centre, Unipress, Polish Academy of Sciences , Ul. Sokolowska 29 , 01–142, WARSAW , POLAND;3. Groupe d'Etudes des Semiconducteurs (C.N.R.S.-U.A. 357), U.S.T.L. , Pl. E. Bataillon 34060, MONTPELLIER , FRANCE;4. I.N.S.A.-C.N.R.S. , 156 Av. de Rangueil 31077, TOULOUSE;5. S.N.C.I.-C.N.R.S. , Av. des Martyrs , 38042, GRENOBLE , FRANCE |
| Abstract: | Abstract Hall coefficient (RH) and electrical resistivity measurements have been performed as a function of temperature (between 77 K and 300 K) and under hydrostatic pressures (up to 15 kbar) on a set of Se-doped GaSb samples with impurity concentrations in the range 8×1017 cm?3 - 1×1018 cm?3. With increasing pressure at 300 K, the electrons are strongly trapped into a resonant impurity level. The pressure induced occupation of this level leads to time-dependent effects at T<120 K. The activated thermal electron emission over a potential barrier E |
| Keywords: | Gallium Antimonide group-VI impurities DX-Centers metastability effects time-dependent Hall coefficient and electrical resistivity configuration coordinate diagram |