Pressure dependence of electron scattering by DX centres in GaAs and AlGaAs |
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| Authors: | E. P. O'reilly C. G. Crookes D. Lancefield A. R. Adams J. J. Harris C. T. Foxon |
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| Affiliation: | 1. Department of Physics , University of Surrey , Guildford GU2 5XH, UK;2. Philips Research Laboratories , Redhill, Surrey RH1 5HA, UK |
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| Abstract: | Abstract The electron mobility of heavily n-dopped GaAs and AlGaAs increases rapidly with applied hydrostatic pressure as carriers are trapped at DX centres. This has been taken as evidence against the Chadi and Chang (CC) negative charge state model of the DX centre. We argue that DX? centres are formed close to d+ centres in highly doped samples, and that the mobility data is in fact fully consistent with the CC model, when such dipole-like correlations are included. |
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| Keywords: | Deep levels III-V semiconductors pressure dependence |
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