High pressure solid state amorphization of Si,Ge and solid solutions Si:GaAs,Ge:GaSb |
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| Authors: | V V Brazhkin A G Lyapin S V Popova R N Voloshin |
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| Institution: | Institute of High Pressure Physics , 142092 , Troick Moscow Region, Russia |
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| Abstract: | Abstract The bulk amorphous tetrahedral semiconductors (Si, Ge. Si0.89(GaAs)0.11, Ge1?x(GaSb)x (0.12<X<I)) were obtained using solid state amorphization. The disordering process occurs at the decompression of high pressure phases Si II, Gell at low temperatures and of solid solutions Sill: GaAs, GeII: GaSb at room temperature. The structure and stability of the obtained phases were investigated |
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