X-ray studies of the semiconductors snas,InTe, TlS and TISe UP TO 43 GPa |
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| Authors: | G B Demishev S S Kabalkina T N Kolobyanina T I Dyuzheva V G Losev |
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| Institution: | Institute of High Pressure Physics of the USSR Academy of Sciences , Troitsk, USSR |
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| Abstract: | Abstract The structures of the semiconductors SnAs, InTe, TlS and TlSe have been investigated using high-pressure (HP) diffraction technique-a gasketed diamond anvil cell (DAC)'. The pressure was measured by ruby fluorescence technique. The first order reversible transition from NaCl to CsCl structure was found in SnAs with volume discontinuity 5% the two-phase area extends from 32 to 43 GPa. The volume change V/v,(P) of the SnAs is shown in Figure 1. In agreement with the gomology rule3, the same pressure effect has been found in SnxSb1?x atP=9 GPa2. |
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| Keywords: | Semiconductors pressure transition structure lattice |
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