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Use of hydrostatic pressure in determining the nature of DX centers in GaAiAs-Si
Authors:S Contreras  V Mosser  R Piotrzkowski  J L Robert
Institution:1. Groupe d'Etudes des Semiconducteurs , Université Montpellier II , Montpellier Cedex 2, 34095, France;2. Schlumberger Montrouge Recherche , 50 Avenue Jean Jaurés, BP. 620 05 Montrouge, 95542, France;3. High Pressure Research Center , Polish Academy of Sciences , Warszawa, PL 01-142, Poland
Abstract:Abstract

We report on activated capture and emission experiments obtained under hydrostatic pressure. The observed structures in the thermostimulated capture curves are interpreted as a competition between capture and emission from the different configurations of the DX center, which are related to the local environment of the Si atom. The analysis of the capture kinetic experiments supports the hypothesis of the negative charge state of the DX center.
Keywords:
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