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Single crystal EXAFS at high pressure
Authors:A San-Miguel  J Pellicer-Porres  A Segura  J P ItiÉ  A Polian  M Gauthier
Institution:1. E.S.R.F. , BP220 Av. des Martyrs, Grenoble, 38043, Ceakx, France;2. Dept. de Physique des Mathaux , Univ. Lyon-1 , 43 Bd. du 11 Nov. 1918, 69 622, Villeurbanne, France;3. Institut de Clència dels Materials, Universitat de València , Dr. Moliner 50, Ed. Investigació, E-46100, Burjassot (València), Spain;4. Physique des Milieux Condensés , (CNRS, UMR 76 OZ), 3 77, Université P. &5. M. Curie, 4 Place Jussieu, 75252, Paris Cedex 05, France
Abstract:Abstract

We present a new technique for structure characterization under high pressure conditions. The use of an undulator beam of the third-generation ESRF source of synchrotron radiation has enabled the first single crystal EXAFS experiments at high pressure using a diamond anvil cell as pressure generator. Taking advantage of the linear polarization of X-rays the technique becomes an orientation-selective probe of the local structure of materials. We describe the principle of the technique and some applications.
Keywords:High pressure  EXAFS  single crystals
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