| 5000小时室温连续激射GaAs/AlGaAs双异质结激光器 |
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| 引用本文： | 中国科学院半导体所DH激光器研究组.5000小时室温连续激射GaAs/AlGaAs双异质结激光器[J].中国激光,1979,6(12):8-11. |
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| 作者姓名： | 中国科学院半导体所DH激光器研究组 |
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| 作者单位： | 中国科学院半导体所DH激光器研究组 |
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| 摘 要： | 一、引言 半导体激光器采用双异质结构(DH),对有源层内的注入载流子及辐射光场进行限域,使得阈电流密度迅速下降为～1×10~3安培/厘米~2,1970年实现了室温连续激射。双异质结激光器是光纤通讯和精密测距的较理想光源,但急待解决稳定性和可靠性问题。自从对DH激光器退化机理有了比较清楚了解之后,激光器寿命基本上每年提高半个至一个数量级。到1976年美国Bell公司通过升温加速老化试验推断激光器寿命可望达到100万小时。也已采用多种方式制作各
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| 收稿时间： | 1979/6/11 |
CW operation over 5000 hours of GaAs/AlGaAs DH laser at room temperature |
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| Abstract: | The configuration and technology for proton bombardment stripe geometric GaAs-GaAlAs DH laser is described briefly. The performances of DH laser under DC forward current were measured and analysed. The threshold current of most lasers is 50-150 mA. Differential quantum efficiency ηd is 30-70%. Some lasers operate in single transverse mode and near single longitudinal mode. The degradation properties were studied and the lifetime for some lasers are over 5000 hours. |
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