UHF generation in sub-micron layers of GaAs |
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| Authors: | G. F. Karavaev E. A. Tkachenko E. V. Uimanov |
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| Affiliation: | (1) V. D. Kuznetsov Physicotechnical Institute, Tomsk University, Tomsk |
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| Abstract: | Mathematical modelling of n+-n-n+ GaAs structures using the macroparticle method and the Monte Carlo procedure for simulating scattering events indicates that at a lattice temperature of 4.2 K ballistic and quasiballistic electron transport can lead to electron plasma instabilities. If the main scattering mechanism is the emission of polar optical phonons, plasma instability leads to UHF current oscillations at frequencies near 460 GHz.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 10–14, December, 1989. |
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