SiO2 passivation film effects on microwave characteristics of YBa2Cu3O7−x-based resonators |
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| Authors: | Masahito Ban Katsumi Suzuki and Youichi Enomoto |
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| Institution: | Superconductivity Research Laboratory, ISTEC, Minato-Ku, Tokyo 105, Japan |
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| Abstract: | SiO2 film coated as a passivation layer for YBa2Cu3O7−x (YBCO)-based microwave devices is investigated by measuring the microwave characteristics of microstrip line resonators. The SiO2 film is deposited with its 0.3 to 0.4 μm thickness by a sputtering method using Ar + 30%O2 plasma. These deposition conditions do not degrade the microwave characteristics and the critical temperature (Tc). Next, the SiO2 film coated resonators are compared with the uncoated ones for two kinds of degradation conditions: a 200°C annealing in air, and an exposure to air at 85°C and 85% RH (relative humidity). We find that the SiO2 passivation film prevents the YBCO thin film from the surface degradation and reacting with water. |
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| Keywords: | SiO2 passivation film YBCO degradation Resonator Annealing Accelerated humidity testing RF magnetron sputtering |
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