Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers |
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Authors: | G V Benemanskaya D V Daineka G É Frank-Kamenetskaya |
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Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) St. Petersburg State Technological Institute, 198013 St. Petersburg, Russia |
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Abstract: | The electronic structure and ionization energy for the system Ba/Si(100)2×1 have been studied as functions of the submonolayer
coverage. It is found that there is an energy gap in the surface states spectrum and that the Ba/Si(100)2×1 interface is semiconducting
up to 1.5 monolayers of Ba. Two surface bands induced by Ba adsorption have been detected. The evolution of the spectrum with
increasing degree of Ba coverage points to the existence of two nonequivalent “adsorption sites,” which differ in binding
energy by 0.11 eV. The development of the Ba-induced bands is found to terminate at a coverage corresponding to the minimum
ionization energy and close to one monolayer. The adsorption bond is shown to have a primarily covalent character.
Zh. éksp. Teor. Fiz. 114, 2145–2152 (December 1998) |
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