Gas source molecular beam epitaxial growth model for Ga
x
In1−x
As
y
P1−y
on GaAs |
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| Authors: | Jin-Shung Liu Tsuen-Lin Lee Hao-Hsiung Lin |
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| Institution: | (1) Room 419, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, People's Republic of China |
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| Abstract: | A gas source molecular beam epitaxial (GSMBE) growth model considering an intermediate InGaAsP state is presented. This model is very simple and needs only two fitting parameters, k
In and k
Ga, which are determined experimentally from In1-x
Ga
x
As
y
P1-y
on InP (0<x<0.47 and 0<y<1). At a growth temperature of 480°C, k
In and k
Ga are 28 and 3 respectively. The temperature dependencies of k
In and k
Ga are also studied: the fitted activation energies are-30 and 330 meV, respectively. Using these parameters, the model is used to predict the AsH3 and PH3 flow rates for growing In1-x
Ga
x
As
y
P1-y
on GaAs (0.51<x<1 and 0<y<1). The lattice mismatch of all the epilayers grown is within 6×10-4. This indicates that this simple GSMBE model covers the whole compositional range of lattice-matched and coherently strained InGaAsP. |
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| Keywords: | |
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