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High sensitivity Si:P and Ge:Li photoconductive i.r. detectors for low photon background applications
Affiliation:1. Faculty of Built Environment, University of New South Wales, Sydney 2052, Australia;2. Institute of Atmospheric Environment, China Meteorological Administration, Shenyang 110166, China;3. Regional Climate Centre of Shenyang, Liaoning Meteorological Bureau, Shenyang, 110166, China;1. Mahidol University International College (MUIC), Nakhon Pathom, Thailand;2. Pennsylvania State University, School of Graduate Professional Studies, Malvern, PA, 19355, USA;3. The University of Western Australia, Perth, Australia;4. Center of Excellence in Management Research for Corporate Governance and Behavioral Finance, SASIN School of Management, Chulalongkorn University, Bangkok, Thailand;1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenyang, 110016, China;2. School of Material Science and Engineering, Northeastern University, No.11 Wenhua Road, Shenyang, 110819, China;3. Foshan Graduate School of Northeastern University, No. 2 Zhihui Road, Foshan, 528300, China;4. Department of Plastic Surgery, The First Affiliated Hospital of China Medical University, No. 155 North Nanjing Street, Shenyang, 110001, China;5. School of Materials Science and Engineering, Henan Polytechnic University, No. 142 Jiefang Middle Road, Jiaozuo, 454000, China;6. School of Science, Shenyang Ligong University, No. 6 Nanping Central Road, Shenyang, 110159, China;7. School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, 110016, China;8. Deaprtment of Physics, National University of Uzbekistan, No. 4, University street, Tashkent, 100174, Uzbekistan
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