p-type ZnO films for preparation of p-n-junctions |
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| Authors: | N R Aghamalyan R K Hovsepyan S I Petrosyan |
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| Institution: | (1) Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia |
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| Abstract: | Photoelectrical properties of ZnO films doped with Li acceptor impurity and prepared by the electron-beam evaporation method were investigated. The obtained films possess a p-type conductivity. Using p-ZnO:Li and n-ZnO:Ga films, the p-n-junctions were prepared and their photoelectrical properties were studied. The mechanism of charge carrier transport in these films and the influence of annealing on the type and mechanism of conductivity were investigated. |
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| Keywords: | ZnO:Li films p-n-junctions conductivity photoelectrical properties |
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