| 高速低阈值半导体激光器速率方程模型参数的直接确定 |
| |
| 引用本文： | 高建军,高葆新,梁春广.高速低阈值半导体激光器速率方程模型参数的直接确定[J].固体电子学研究与进展,2002,22(1):127-130. |
| |
| 作者姓名： | 高建军 高葆新 梁春广 |
| |
| 作者单位： | 清华大学电子工程系,北京,100084 |
| |
| 摘 要： | 针对高速低阈值半导体激光器提出一种模型参数的直接确定方法。该方法仅利用阈值附近端口阻抗特性和阈值以上弛豫振荡频率特性来提取半导体激光器的模型参数 ,无需拟合激光器的强度调制 (IM)频率响应特性或者相对噪声强度特性 ,但是需要器件的有源区结构参数和对光限制因子 Γ的估算。研究表明当光限制因子Γ确定时 ,器件模型参数是唯一的
|
| 关 键 词： | 半导体激光器 等效电路模型 模型参数提取 |
| 文章编号： | 1000-3819(2002)01-127-04 |
| 修稿时间： | 2000年5月25日 |
The Direct Extraction of the Rate Equation Model Parameters for the High-speed Low-threshold Semiconductor Laser |
| |
| GAO Jianjun,GAO Baoxin,LIANG Chunguang.The Direct Extraction of the Rate Equation Model Parameters for the High-speed Low-threshold Semiconductor Laser[J].Research & Progress of Solid State Electronics,2002,22(1):127-130. |
| |
| Authors: | GAO Jianjun GAO Baoxin LIANG Chunguang |
| |
| Abstract: | A new method which directly extracts the model parameters for the high speed low threshold semiconductor laser is presented, where only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used. It is not necessary to fit the intensity modulation frequency response or the relative noise intensity response avoiding the affect of optical feedback. The study shows that when the optical confinement factor is given, the device model parameters are unique which are different from the results of the previous references. |
| |
| Keywords: | semiconductor laser equivalent circuit model model parameter extract methods |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
