A simple analysis of the einstein relation in bismuth under different physical conditions |
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| Authors: | K P Ghatak A Ghoshal S N Biswas |
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| Institution: | (1) Department of Electronics and Telecommunication Engineering Faculty of Engineering and Technology, Jadavpur University, 700 032 Calcutta, India;(2) Present address: Department of Instrumentation Engineering, Salt Lake Campus, Jadavpur University, Block-LB, Plot No. 8, 700 032 Calcutta, India;(3) Present address: Institut, für Halbeitertechnik, RWTH Aachen, Walter Shottky Hass, Sommerfeld Strasse, 5100 Aachen, Germany |
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| Abstract: | Summary We have studied the Einstein relation of the diffusivity-mobility ratio of the carriers in Bi in accordance with the McClure
and Choi, the hybrid, the Cohen, the Lax and the ellipsoidal parabolic energy band models under magnetic quantization, cross-field
configuration, quantum wells, electric-field-aided quantum wells, quantum wells under cross-field configuration, quantumwell
wires, electrifield-aided quantum well wires and quantum well wires under cross-field configurations, respectively. The Einstein
relation varies with various physical variables in different manners which are totally band structure dependent. We have also
suggested an experimental method of determining the diffusivity-to-mobility ratio in degenerate materials having arbitrary
dispersion laws. |
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| Keywords: | Electron density of states determinations |
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