Electrically Driven InAs Quantum-Dot Single-Photon Sources |
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| Authors: | XIONG Yong-Hua NIU Zhi-Chuan DOU Xiu-Ming SUN Bao-Quan HUANG She-Song NI Hai-Qiao DU Yun XIA Jian-Bai |
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| Institution: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Abstract: | Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K |
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| Keywords: | 68 65 +g 78 66 Fd 81 05 Ea 81 15 Hi |
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