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镁掺杂对In2O3电导和气敏性能的影响
引用本文:葛秀涛,倪受春. 镁掺杂对In2O3电导和气敏性能的影响[J]. 化学物理学报(中文版), 2002, 15(2): 157-160. DOI: 10.1088/1674-0068/15/2/157-160
作者姓名:葛秀涛  倪受春
作者单位:葛秀涛(滁州师范专科学校,化学系,滁州,239012);倪受春(滁州师范专科学校,物理系,滁州,239012)   
基金项目:安徽省教育厅自然科学基金 
摘    要:用共沉淀法制备了Mg2+掺杂的In2O3纳米粉,研究了镁掺杂对In2O3电导和气敏性能的影响.结果表明:MgO和In2O3间可形成有限固溶体In2-xMgxO3(0≤x≤0.40);MgIn×电离的空穴对材料导带电子的湮灭,使掺镁纳米粉的电导变得很小;n(Mg2+):n(In3+)=1:2共沉淀物于900℃下热处理4 h,用所得的纳米粉制作的传感器在320~370℃下,对45μmol/L C2H5OH的灵敏度达102.5,为相同浓度干扰气体Petrol的12倍多.

关 键 词:电导  酒敏传感器

Effect of MgO Doping on the Conductance and Gas-sensing Properties of In2 O3
Ge Xiutao,Ni Shouchun. Effect of MgO Doping on the Conductance and Gas-sensing Properties of In2 O3[J]. Chinese Journal of Chemical Physics, 2002, 15(2): 157-160. DOI: 10.1088/1674-0068/15/2/157-160
Authors:Ge Xiutao  Ni Shouchun
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Abstract:Micro-powder of In2O3 doped with MgO is prepared by chemical coprecipitation, effects of Mg2+ on the conductance and gas-sensing properties of In2O3 was investigated. The results demonstrated that limite solid solution In2-xMgxO3(0≤x≤0.40) can be formed between MgO and In2O3. Positive protons produced i the ionization process of MgIn×can null the electrons in the conductive gap and this decrease the electrical conductance of the micro-powder significantly. The sensor based on then(Mg2+)∶n(In3+)=1∶2 chemical coprecip tation raw powder sintered at 900℃ for 4 h, to 45μmol/L C2H5OH can be 102.5 at 320~370℃. This is twelve times more than that of same concentration petrol.
Keywords:Mg2+  In2-xMgxO3
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