Effect of atomic hydrogen in highly lattice-mismatched molecular beam epitaxy |
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Authors: | Y J Chun Y Okada and M Kawabe |
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Institution: | a Institute of Materials Science, University of Tsukuba Tsukuba, Ibaraki 305 Japan |
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Abstract: | Effects of atomic hydrogen on the growth of lattice-mismatched InAs/GaAs and GaAs/InP systems have been investigated. The irradiation of atomic H has resulted in a delay of the onset of formation of three-dimensional islands maintaining flat surface morphology and increase of the critical layer thickness (CLT) from 4 to 10 å in the case of the InAs/GaAs system. The effect of atomic H was shown to be dependent on the growth conditions such as the growth temperature and V/III flux ratio. The increase of CLT with atomic H irradiation may be explained by the uniform distribution of the total misfit stress in the plane of the surface as a result of enhanced two-dimensional growth by atomic H acting as a surfactant. |
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