Energy band structure of CdSnAs2 and CdGeAs2

The energy band structure of CdSnA₂ and CdGeAs₂2 is calculated by the empirical-pseudopotential method, taking account of spin-orbital interaction. The calculated parameters – E_g = 0.25, _cr = 0.05, _s.o = 0.44 for CdSnAs₂ and E_g = 0.55, _cr = 0.20, and _s.o = 0.33 for CdGeAs₂ (all in eV) — are in good agreement with experiment. The conclusion drawn in a series of experimental works that there are additional minima close to the bottom of the CdSnAs₂ conduction band is not confirmed in the calculation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 78–82, December, 1981.