| 金属/有机高分子膜/n-InP肖特基势垒 |
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| 引用本文： | 任云珠,盛篪,张玲,张忻,孙恒慧.金属/有机高分子膜/n-InP肖特基势垒[J].固体电子学研究与进展,1986(4). |
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| 作者姓名： | 任云珠 盛篪 张玲 张忻 孙恒慧 |
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| 作者单位： | 复旦大学物理系
(任云珠，盛篪，张玲，张忻)，复旦大学物理系(孙恒慧) |
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| 摘 要： | 本文介绍用有机高分子膜(LB膜和聚酰亚胺)代替n型InP肖特基势垒二极管中的薄氧化层,所得到的肖特基势垒二极管的势垒高度大于0.7eV,反向漏电流小于2.3×10~(-5)A/cm~2,性能稳定.还叙述了有机高分子膜的制备方法,电学测量结果,并与金属/薄氧化膜/n-InP肖特基势垒进行了比较,同时讨论了该法的优缺点.
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Metal/Organic High Molecular Layer/n-lnP Schottky Barrier |
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| Abstract: | A mono-molecular layer of stearic acid was deposited between InP and Au by a Langmuir-Blodgett method to increase the height of Schottky barrier fabricated with a thin layer of polymide. The resulted height φb of n-InP Schottky barrier was greater than 0.7eV and the performances were electrically stable with the leakage current less than 2.3 × 10-6A/cm2.A brief discussion of its advantages and disadvantages was given compared with metal/thia oxide film/n-InP Schottky barrier. |
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