| 离子注入和固相外延制备Si1-x-yGexCy半导体薄膜 |
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| 引用本文： | 刘雪芹,王印月,甄聪棉,张静,杨映虎,郭永平.离子注入和固相外延制备Si1-x-yGexCy半导体薄膜[J].物理学报,2002,51(10):2340-2343. |
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| 作者姓名： | 刘雪芹 王印月 甄聪棉 张静 杨映虎 郭永平 |
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| 作者单位： | 兰州大学物理系,兰州730000 |
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| 基金项目： | 国家自然科学基金 (批准号 :698760 17)资助课题 |
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| 摘 要： | 用等离子体增强化学气相淀积(PECVD)生长了200nm的SiGe薄膜,然后将C离子注入SiGe层,经两步热退火处理制备了Si1-x-yGexCy三元合金半导体薄膜.应用卢瑟福背散射(RBS),傅里叶变换红外光谱(FTIR)和高分辨率x射线衍射(HRXRD)研究了薄膜的结构和外延特性.发现C原子基本处于替代位置,C原子的掺入缓解了SiGe层的压应变
关键词：
Si1-x-yGexCy薄膜
离子注入
固相外延
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| 关 键 词： | Si1-x-yGexCy薄膜 离子注入 固相外延 |
| 文章编号： | 1000-3290/2002/51(10)/2340-04 |
| 收稿时间： | 2001-12-25 |
| 修稿时间： | 3/6/2002 12:00:00 AM |
Preparation of Si1-x-yGexCy semiconductor films on Si by ion implantation and solid phase epitaxy |
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| Liu Xue-Qin,Wang Yin-Yue,Zhen Cong-Mian,Zhang Jing,Yang Ying-Hu and Guo Yong-Ping.Preparation of Si1-x-yGexCy semiconductor films on Si by ion implantation and solid phase epitaxy[J].Acta Physica Sinica,2002,51(10):2340-2343. |
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| Authors: | Liu Xue-Qin Wang Yin-Yue Zhen Cong-Mian Zhang Jing Yang Ying-Hu and Guo Yong-Ping |
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| Abstract: | Si 1-x-y Ge x C y ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequest solid phase epitaxy (SPE).Two step annealing technique was employed in the SPE processing.The properties of the alloy films were determined using Rutherford backscattering spectroscopy(RBS),Fourier transform infrared spectroscopy(FTIR) and High resolution x ray diffraction(HRXRD) measurements.It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer. |
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| Keywords: | Si 1-x-y Ge x C y films ion implantation solid phase epitaxy |
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