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Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods
Authors:Tetsuya Shimogaki  Taihei Ofuji  Norihiro Tetsuyama  Kota Okazaki  Mitsuhiro Higashihata  Daisuke Nakamura  Hiroshi Ikenoue  Tanemasa Asano  Tatsuo Okada
Institution:1. Department of Information Science and Electrical Engineering, Kyushu University, West 2, 530-1, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
Abstract:The effect of high repetition rate pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus-ion-implanted zinc oxide nanorods has been investigated. The recovery levels of phosphorus-ion-implanted zinc oxide nanorods have been measured by photoluminescence spectra and cathode luminescence images. Cathode luminescence disappeared over 300 nm below the surface due to the damage caused by ion implantation with an acceleration voltage of 25 kV. When the annealing was performed at a low repetition rate of the KrF excimer laser, cathode luminescence was recovered only in a shallow area below the surface. The depth of the annealed area was increased along with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded in annealing the whole damaged area of over 300 nm in depth and in observing cathode luminescence. Thus, the effectiveness of high repetition rate pulsed laser annealing on phosphorus-ion-implanted zinc oxide nanorods was demonstrated.
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