常压射频冷等离子体TEOS工艺沉积二氧化硅薄膜的光谱研究

常压射频冷等离子体是近年来广受关注的一种新兴技术,在薄膜沉积方面已体现出其巨大潜力,但由于等离子体本身反应的复杂性,使其在薄膜沉积方面的机理至今尚未完全清楚。本文旨在从光谱分析的角度,研究常压射频冷等离子体TEOS工艺沉积二氧化硅薄膜。实验中我们检测到了Si和C-H的特征峰,表明二氧化硅是由TEOS在等离子体中分解而形成的。同时还研究了不同输入功率下Si和C-H的特征峰强度的变化情况,并发现其变化规律与生长速率有着很好的相似性。在温度为200℃的条件下所生成的SiO2薄膜的折射率在1.47-1.48的范围内。

An Optical Emission Spectroscopy Study of the Deposited SiO2 Film with RF Cold Plasma at Atmospheric-pressure

The radio frequency(RF)cold plasma at atmospheric-pressure,as a new technique for films deposition,shows enormous potential of large-scale application.For the complexity of the reactions in the plasma,the mechanism of the films deposition is not clear.In this paper,the technique of the SiO_2 deposition used the RF cold plasma at atmospheric-pressure is analysed by the optical emission spectroscopy(OES).The Si and C-H peaks detected by the OES shows that the SiO_2 is the decomposed product of TEOS.Furthermore,the dependence of the Si and C-H emission intensities on RF power are also studied,and they show a good agreement with the dependence of the deposition rate on RF power.The refractive index of the films deposited at 200℃ is ranged from 1.47 to 1.48.