Quantum transport studies of electron accumulation layers in InSe bulk crystals

Summary Experiments show that the Hall resistivityρ _xy of InSe bulk crystals is quantized into integer multiples ofh/e ². Quantum Hall effect in InSe is explained as a result of plane defects in InSe crystals. The electrons in bulk InSe are localized at these defects at low temperatures forming regions with two-dimensional conductivity. Concentration of electrons in these regions isN _2D=2·10¹¹ cm⁻² and their mobility μ=2·10⁴cm²/V·s. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.