Quantum transport studies of electron accumulation layers in InSe bulk crystals |
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| Authors: | G L Belenkii E A Vyrodov V N Zverev |
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| Institution: | (1) Institute of Physics, Academy of Sciences of Azerbaidhan SSR, 370143 Baku, USSR;(2) Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka, 142432, USSR |
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| Abstract: | Summary Experiments show that the Hall resistivityρ
xy
of InSe bulk crystals is quantized into integer multiples ofh/e
2. Quantum Hall effect in InSe is explained as a result of plane defects in InSe crystals. The electrons in bulk InSe are localized
at these defects at low temperatures forming regions with two-dimensional conductivity. Concentration of electrons in these
regions isN
2D=2·1011 cm−2 and their mobility μ=2·104cm2/V·s.
To speed up publication, the authors of this paper have agreed to not receive the proofs for correction. |
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| Keywords: | Theory of electronic transport scattering mechanisms |
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