Preparation and electrical conductivity of LISICON thin films |
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Authors: | Hideaki Ohtsuka Akihiko Yamaji |
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Affiliation: | Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibarki-ken, 319-11, Japan |
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Abstract: | LISICON thin films have been prepared with RF sputtering and subsequent heat-treatment. The crystal phases of sputtered films depend on the sputtering conditions, especially the target composition and ambient gas atmosphere. Though the as-sputtered films in Ar-O2 mixed gas (target composition: Li3Zn0.5GeO4+0.5 ZnO, gas pressure: 9×10-2 Torr, oxygen gas content: 74.6%) were amorphous; LISICON single phase thin films were obtained after annealing at 600°C for 6 h. The conductivity of the film at 500°C is 5×10-3ω-1cm-1 which is slightly lower than that for ceramic Li3Zn0.5GeO4. |
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