Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature |
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| Authors: | Jun Xu Ling Yang Jiaxin Mei Wei Li Ling Xu Kunji Chen |
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| Institution: | a National laboratory of Solid State Microstructures, Department of Physics and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjing University, Hankou Road 22, Nanjing 210093, China
b National Laboratory of Infrared Physics, Shanghai Institute for Technical Physics, CAS, Shanghai, China |
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| Abstract: | Hydrogenated amorphous SiC thin films deposited at low substrate temperature (100 °C) show the different bonding configurations and microstructures which depend on the carbon concentrations in the films controlled by the gas ratio R of methane to silane during the deposition. Photoluminescence characteristics are investigated for these samples with different structures. A strong luminescence in red light region can be observed for samples deposited with low gas ratio R which is significantly reduced its intensity with increasing the carbon concentrations in the films. On the other hand, the luminescence bands located at blue-green light region are detected under UV light excitation for samples deposited with high gas ratio R, which can be associated with the existence of amorphous SiC clusters in the films. |
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| Keywords: | 78 55 Qr 81 05 Gc 81 15 Gh |
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