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Bi2O3 rods deposited under atmospheric pressure by means of halide CVD on c-sapphire |
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| Authors: | T Takeyama N Takahashi S Itoh |
| Institution: | a Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan b Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1Johoku, Hamamatsu 432-8561, Japan c Research Center, Asahi Glass Co., Ltd 1150 Hazawa-cho, Yokohama 221-8755, Japan |
| Abstract: | Bismuth Oxide (Bi2O3) rods are successfully prepared on δ-Bi2O3 films under atmospheric pressure by means of halide chemical vapour deposition using BiI3 and O2 as a starting material. The deposition of Bi2O3 rods strongly depends on the deposition temperature, the input partial pressure of BiI3 and O2 and the method for supplying O2 gas. Bi2O3 rods can be obtained at O2]/BiI3] ratios of 500 and N2:O2=50:250. The length of the Bi2O3 rods increases proportionally from 2 to 30 μm, while their diameters of between 0.2 and 0.5 μm do not depend on the deposition time. |
| Keywords: | 68 55 &minus a |
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