Structural and dielectric properties of Bi modified PLZT ceramics |
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Authors: | Radheshyam Rai Seema Sharma |
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Affiliation: | a Electronic Materials Division, National Physical Laboratory, Dr K.S. Krishnan Marg., New Delhi 110012, India b Department of Physics, BITS-PILANI_GOA Campus, Zuari Nagar, Goa 403726, India c Department of Physics and Metrology, Indian Institute of Technology, Kharagpur 721302, India |
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Abstract: | Polycrystalline samples of bismuth (Bi) doped lead lanthanum zirconate titanate (PLZT) with the general formula Pb0.9(La1−zBiz)0.1(Zr0.65Ti0.35)0.975O3, where [z=0.0, 0.3, 0.5, 0.7] near the morphotropic phase boundary (MPB) has been synthesized by a solid solution mixing technique. Some aspect of crystal structure of the compound at room temperature was studied using X-ray diffraction (XRD) technique. Detailed studies of dielectric constant (ε) and dielectric loss () obtained both as a function of frequency (100 Hz-100 kHz) at room temperature (RT) and temperature (RT-600 K) at 10 kHz suggest that compounds undergo ferroelectric-paraelectric phase transition of diffuse type. Both ac and dc conductivity have been studied over a wide range of temperature. The activation energy (Ea) of the samples was calculated from the plot of ac conductivity vs. inverse of absolute temperature. The temperature variation of resistivity shows that the compounds have negative temperature coefficient of resistance (NTCR). |
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Keywords: | 77.80.Bh |
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