Dielectric properties of SrBi2−xPrxNb2O9 ceramics (x=0, 0.04 and 0.2) |
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Authors: | Shiming Huang Chude Feng Lidong Chen |
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Affiliation: | a State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China b Graduate School of the Chinese Academy of Science, Beijing 100039, China |
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Abstract: | SrBi2−xPrxNb2O9 (x=0, 0.04 and 0.2) ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase layered perovskite structure ferroelectrics were obtained. A relaxor behavior of frequency dispersion was observed among Pr-doped SrBi2Nb2O9. The degree of frequency dispersion ΔT increased from 0 for x=0-7 °C for x=0.2, and the extent of relaxor behavior γ increased from 0.94 for x=0-1.45 for x=0.2. The substitution of Pr ions for Bi3+ ions in the Bi2O2 layers resulted in a shift of the Curie point to lower temperatures and a decrease in remanent polarization. In addition, the coercive field 2Ec reduced from 110 kV/cm for an undoped specimen to 90 kV/cm for x=0.2. |
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Keywords: | 77.22.&minus d 77.22.Gm 77.80.&minus e 77.84.&minus s |
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