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Structure due to indirect exciton in photocurrent spectrum of homoepitaxial diamond film |
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| Authors: | K Murayama N Kodaira M Ogura D Takeuchi H Okushi |
| Institution: | a College of Humanities and Sciences, Nihon University, Sakurajosui, Tokyo 156-8550, Japan b Research Center for Advanced Carbon Materials, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan |
| Abstract: | Photocurrent spectrum in homoepitaxal diamond film formed by chemical vapor deposition has been measured in the photon energy range 5-6 eV of the vicinity of the indirect band gap. It has been seen that the line shape of the spectrum in the photon energy range lower than 5.6 eV agrees with the fundamental absorption edge spectrum in natural diamond. Structures in the spectrum have been explained from the optical transition due to indirect excitons assisted by TO phonons and indirect band-to-band transition. |
| Keywords: | 71 35 &minus y 71 55 Cn 73 50 Pz 78 20 &minus e |
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