|
|||||
|
|
Core level spectroscopy and RHEED analysis of KGd(WO4)2 surface |
|
| Authors: | VV Atuchin VG Kesler LD Pokrovsky |
| Institution: | a Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation b Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation c Laboratory of Crystallization of Oxide Materials, Institute of Mineralogy and Petrography, Novosibirsk 630090, Russian Federation |
| Abstract: | Structural and electronic characterisation of mechanically polished (010) KGd(WO4)2 (KGW) has been produced by reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). With XPS analysis the original element binding energies, chemical composition and valence band structure of KGW have been determined. |
| Keywords: | 42 70 Hj 61 14 Hg 82 65 &minus I 82 80 Pv |
| 本文献已被 ScienceDirect 等数据库收录！ | |