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Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers |
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| Authors: | KH Lee DU Lee HS Lee |
| Institution: | a Department of Materials Science and Engineering, Korea Advanced Institute of science and Technology, Daejeon 305-701, South Korea b Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea c Department of Materials Science and Metallurgy, Kyungpook National University, 1370 Sangyeok-dong, Buk-ku, Daegu 702-701, South Korea d Department of Physics, Chungnam National University, 200 Gung-dong, Yuseong-gu, Daejeon 305-764, South Korea |
| Abstract: | The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650 °C. When the InAs/GaAs QDs were annealed at 700 °C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800 °C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing. |
| Keywords: | 81 07 Ta 78 55 Cr 61 46 tw |
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