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Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas |
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| Authors: | A V Antonov V I Gavrilenko E V Demidov S V Morozov A A Dubinov J Lusakowski W Knap N Dyakonova E Kaminska A Piotrowska K Golaszewska M S Shur |
| Institution: | (1) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) GES-UMR, CNRS-Université Montpellier 2, Montpellier, 34950, France;(3) Institute of Experimental Physics, University of Warsaw, Warsaw, 00-681, Poland;(4) Institute of Electron Technology, Warsaw, 02-668, Poland;(5) Rensselaer Polytechnic Institute, Troy, N.Y. 121180-3590, USA |
| Abstract: | The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transistors stems from the possibility of developing terahertz-range radiation detectors and generators on the basis of these devices. Measurements of the value and the magnetic-field dependence of the drain-source resistance are used to estimate the electron density and mobility in the transistor channel. Results of magnetotransport measurements are employed to interpret the nonresonant detection observed in transistors with a gate width from 0.8 to 2.5 µm. |
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