The generation of free carriers in CdTe by radiation

This paper presents the results of the quantum efficiency measurement of CdTe over the photon energy range 1·5–4·5 eV obtained from the photovoltaic effect on special photodiodes. There are two kinks observable in the increase of the quantum efficiency which can be explained on the basis of the band structure of CdTe. The first is due to electron, the second due to hole ionization.I wish to thank Prof. E.Klier and Doc. R.Kuel, CSc. for their valuable discussions and Ing. P.Polívka, CSc. for the preparation of CdTe single crystals.