Cubic InN on -plane sapphire |
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Authors: | V Cimalla U Kaiser I Cimalla G Ecke J Pezoldt L Spiess O Ambacher H Lu W Schaff |
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Institution: | aCenter for Micro- and Nanotechnologies, Technical University Ilmenau, 98693 Ilmenau, Germany;bDepartment of Electrical and Computer Engineering, Cornell University, Ithaca, NY, United States |
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Abstract: | InN has been grown directly on r-plane sapphire substrates by plasma-induced molecular beam epitaxy. X-ray diffraction and transmission electron microscopy investigations have shown that the InN layers consist of a predominant zinc-blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase whose content increases with proceeding growth. The InN layer is defect rich with a high number of stacking faults and twins. As a consequence a very high residual doping of was estimated. The lattice constant for the zinc-blende phase of InN was found to be a=4.986 Å. The optical investigations were strongly affected by a high number of defects, but nevertheless indicated an absorption edge below 0.6 eV. For this unusual growth of the metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed, where the metastable zinc-blende phase grows directly on the r-plane of sapphire. |
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