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Transport measurements through stacked InAs self-assembled quantum dots in time domain |
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| Authors: | M. S. Jun D. Y. Jeong J. E. Oh S. W. Hwang D. Ahn |
| Affiliation: | a Department of Electronic and Computer Engineering, Korea University, Anam, Sungbuk, Seoul 136-075, South Korea;b Institute of Quantum Information Processing and System, University of Seoul, 90 Jeonnong, Seoul 130-743, South Korea;c Department of Electronic Engineering, Hanyang University, Ansan, Kyunggi-do 425-791, South Korea |
| Abstract: | We report electronic characterization of stacked InAs self-assembled quantum dots (SAQDs) embedded in GaAs, using ultra-short pulses. Electrical pulse trains with the width ranging from 50 to 500 ps were applied on the waveguide-type top electrode and the average substrate current was monitored. The current showed staircases and oscillatory features as a function of the pulse width. The staircase could represent single electron injection into SAQDs and the observed oscillatory features could be related with temporal change of electronic occupation in quantum states of SAQDs. |
| Keywords: | Author Keywords: Self-assembled quantum dot Electrical pulse Time domain |
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