Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/n +-GaAs/(Ga,Mn)As

The spin light-emitting diodes based on InGaAs/GaAs heterostructures with a quantum well and an injector in the form of a (Ga,Mn)As ferromagnetic layer have been studied. It has been demonstrated that the efficiency of electron spin injection in the structure with a (Ga,Mn)As/n⁺-GaAs tunneling barrier can be controlled by varying the parameters of n⁺-GaAs. The spin injection control mechanisms associated with the thermal activation and tunneling of carriers have been discussed.