AlGaN nanostructures with extremely high quantum yield at 300 K |
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Authors: | A A Toropov E A Shevchenko T V Shubina V N Jmerik D V Nechaev G Pozina S V Ivanov |
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Abstract: | Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of ~300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy. |
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