Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy

Epitaxial layers in a system of InAs_1–x–ySb_yP_x solid solutions in the composition range of 0 < x < 0.72 were obtained on an InAs(001) substrate by metalorganic vapor phase epitaxy (MOVPE). The layer-by-layer analysis of obtained structures by secondary ion mass spectrometry showed a gradient change in the composition along the growth direction. A dramatic change in the composition at the layer/substrate heteroboundary was observed for the quaternary InAsSbP solid solutions due to the presence of radicals of arsenic compounds in the gas phase. Upon MOVPE deposition on the InAs substrate in a system of InAsSbP solid solutions, the decrease in the solid-phase content of arsenium by less than (1–x–y) < 0.3 resulted in a suppression of the deposited layer gradientness, as well as suppressed fluctuations in the composition in the initial transition layer.