Investigation of the layer-by-layer transition near the bulk smectic-A-crystal-B transition in thick free-standing films |
| |
Authors: | V. K. Dolganov R. Fouret C. Gors |
| |
Affiliation: | (1) Institute of Solid State Physics, RAS, 142432 Chernogolovka, Moscow Region, Russia;(2) Laboratoire de Dynamique et Structures Des Materiaux Moleculaires, Universite de Lille I, UFR de Physique, 59655 Villeneuve d’Ascq, France |
| |
Abstract: | Highly sensitive optical reflectivity measurements are used to investigate the layer-by-layer transition in extremely thin and thick N-(4-n-hexyloxybenzylidene)-4-n-hexylaniline (6O.6) films. The simple power-law form, N=N 0 t −1/3, for the penetration of the crystal-B order is found to describe the transitions only near the surface. A deviation from the power law is observed for the interior layers. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 4, 266–269 (25 February 1996) Published in English in the original Russian journal. Edited by Steve Torstveit. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|