Peculiar reflections in diffraction patterns as indicators of structural type and quality

Reflections serving as indicators of the types of packets forming crystal structures of many layered semiconductors have been revealed in diffraction patterns. It is found that the values l for the strongest reflection in series 000l and 00l, as well as the next to the strongest reflection in series \(hh\bar 2\bar hl\) (h = const) and 0kl (k = const) for hexagonal and monoclinic structures, respectively, determine the number of polyhedral (Tand O) cation-filled layers per cell and indicate the types of packets TOT \(TO\bar TE\) , \(TO\bar T\bar TE\) , \(TOO\bar TE\) , \(TTO\bar T\bar TE\) , \(OOE_1 TO\bar TE_1 \) and OOE \(OOE_1 TO\bar TE_2 TO\bar TE_1 \) , where T and \(\bar T\) are inversely oriented tetrahedra, O is an octahedron, E is an empty interpacket layer, and E₁ and E₂ are partially filled (to less than 1/3) interpacket layers.